We have realized, for the first time, a UV sensor that
operates at temperatures up to 700°C by using N+ implantation into
6H-SiC.
The photocurrent of the sensor increased with temperature,
and at 400°C and 700°C, the photocurrent is approximately double and triple
that at room temperature (RT), respectively.
It was clarified that the temperature dependence of the
photocurrent reveals the characteristics of absorption particular to indirect
transition, and also the minority carrier diffusion length. Dark current
increased rapidly at temperatures exceeding 450°C.
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