High-quality epitaxial AlN films were deposited on sapphire
substrates at low growth temperature using a helicon sputtering system.
SAW filters fabricated on the AlN films exhibited excellent
characteristics, with center frequency of 354.2 MHz, which corresponds to a
phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW
devices is presented and applied to deep-UV light detection.
A frequency downshift of about 43 KHz was observed when the
surface of SAW device was illuminated by a UV sensor with dominant wavelength
of around 200 nm. The results indicate the feasibility of developing remote
sensors for deep-UV measurement using AlN-based SAW oscillators.
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