The dynamic properties of semiconductor gas sensors were studied by
measuring the transient response conductivity after rapid changes in the
concentration of in air at 773 K using pulse reaction technique.
The sensor used was a thin film semiconductor without other additives,
which was produced by reactive sputtering process. Transient response
conductivity after a rapid change from pure air to in air was measured.
In the inital period, the square of sensor conductivity values
increased linearly, and after the initial period, the difference between
the values and steady‐state values decreased exponentially.
The transient response conductivity from in air to pure air was
measured. The sensor conductivity values decreased exponentially. To
explain these and steady‐state results, the authors suggest an overall
relationship between concentration and conductivity of the sensor for
both steady‐state and transient response, which is in satisfactory
agreement with the experiment.
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